Ultralow-Power Angle Sensor Now Available from NVE

NVE Corporation has introduced the AAT009-10E Ultralow-Power Tunneling Magnetoresistance (TMR) Angle Sensor, a high-output magnetic sensor for angle measurements based on rotating magnetic fields.

The AAT009 has six megohm device resistance for ridiculously low power consumption, and can run years on a single button cell or on scant harvested power. Harvested power can be intermittent, and AAT-Series sensors detect and maintain absolute position information, and immediately power up in the correct position after power is restored.

Key AAT009 features include:

• Six megohm typical device resistance for ultralow power consumption
• 0.5 degrees maximum angular measurement error with fixed magnetic bias
• 200 mV/V peak-to-peak output signals
• Wide magnet airgap tolerance
• Sine and cosine outputs for direction detection
• Ultraminiature 2.5 mm x 2.5 mm x 0.8 mm TDFN6

According to a company press release, AAT-Series sensors use unique Tunneling Magnetoresistance (TMR) elements for large signals and low power consumption.Also known as Spin-Dependent Tunneling (SDT), Magnetic Tunnel Junction (MTJ), or Tunneling Magnetic Junction (TMJ), Tunneling Magnetoresistance is a spintronic quantum effect that produces a dramatic resistance change in a normally insulating layer, depending on the magnetic field and thus the predominant electron spin in a free layer.

Because they are resistive devices with no active components, AAT-Series sensors have no minimum voltage and can be powered from single cells.

For more information, visit NVE.

Sources: Press materials received from the company and additional information gleaned from the company’s website.