Vishay Launches 1.2-V Rated Power MOSFETs

By DE Editors

September 19, 2007—Vishay Intertechnology, Inc. (Malvern, PA) announced power MOSFETs with on-resistance ratings at a 1.2-V gate-to-source voltage, a development to help designers simplify power management circuitry while extending battery run times in portable electronic systems.

The new 1.2-V-rated Vishay Siliconix TrenchFET devices bring the MOSFET turn-on voltage into alignment with the 1.2-V to 1.3-V operating voltages of digital ICs used in mobile electronics, for safer and more reliable designs. As the first power MOSFETs that can be driven directly from 1.2-V buses, the new TrenchFETs provide the additional potential benefit of eliminating the need for an extra conversion stage in battery-operated systems with a core voltage lower than 1.8 V.

The new 1.2-V TrenchFETs offer guaranteed n-channel on-resistance as low as 0.041 ohms and p-channel on-resistance as low as 0.095 ohms at a 1.2-V gate drive. On-resistance performance at a 1.5-V gate drive is better than in devices for which 1.5 V is the lowest gate-to-source specification: as low as 0.022 (n-channel) and 0.058 (p-channel).

Typical applications for the new devices include load, power amplifier, and battery charger switching in cell phones, PDAs, MP3 players, digital cameras, and other portable systems. Key specifications are online.

For details, go to Vishay Intertechnology, Inc.

Sources: Press materials received from the company and additional information gleaned from the company’s website.